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| SID01N60 Elektronische Bauelemente 1.6A, 600V,RDS(ON)8[ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SID01N60 provide the designer with the best combination of fast switching. The TO-251 is universally preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. 5.60.2 6.60.2 5.30.2 TO-251 2.30.1 0.50.05 7.00.2 Features * Dynamic dv/dt Rating 7.00.2 1.20.3 0.750.15 * Simple Drive Requirement * Fast Switching * Repetitive Avalanche Rated 0.60.1 2.3REF. 0.50.1 G D S Dimensions in millimeters D G Marking Code: 01N60 XXXX(Date Code) S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current 1 Symbol V DS V GS ID@TC=25 C ID@TC=100C IDM PD@TC=25 C o o o Ratings 600 20 1.6 1 6 39 0.31 Unit V V A A A W W/ C o Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range 2 EAS IAR EAR Tj, Tstg 13 1.6 0.5 -55~+150 mJ A mJ o C Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient http://www.SeCoSGmbH.com/ Symbol Max. Max. Rthj-c Rthj-a Ratings 3.2 110 o o Unit C /W C /W Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 5 SID01N60 Elektronische Bauelemente 1.6A, 600V,RDS(ON)8[ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C ) Drain-Source Leakage Current(Tj=150C) Static Drain-Source On-Resistance o o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS RDS(ON) Gfs Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Min. 600 _ Typ. _ Max. _ Unit V V/ C V nA uA uA [ o Test Condition VGS=0V, ID=250uA Reference to 25 C, ID=1mA VDS=VGS, ID=250uA VGS= 20V VDS=60 0V,VGS=0 VDS=480 V,VGS=0 VGS=10V, ID=0.8A VDS=50V, ID=0.8A ID=1.6A VDS=480V VGS= 10V o 0.6 _ _ _ _ _ 2.0 _ _ _ _ 4.0 100 100 500 8.0 _ _ _ _ 7.2 Forward Transconductance Total Gate Charge3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time3 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance _ _ _ _ _ _ _ _ _ _ _ 0.8 7.7 1.5 2.6 8 5 14 7 286 25 5 S nC _ _ _ _ _ _ _ VDD=300V ID=1.6A nS VGS=10V RG=10 [ RD=187.5 [ pF VGS=0V VDS=25V f=1.0MHz Source-Drain Diode Parameter Forward On Voltage 3 Continuous Source Current(Body Diode) Pulsed Source Current(Body Diode) 1 Symbol VSD IS Min. _ _ Typ. _ _ _ Max. 1.5 Unit V A A Test Condition IS=1.6A, VGS=0V.Tj=25C VD=VG=0V,VS=1.5 V o 1.6 6 ISM _ Notes: 1. Pulse width limited by safe operating area. 2. Staring Tj=25 : , VDD=50V, L=10mH, RG=25 L , IAS=1.6A. 3. Pulse width 300us, duty cycle 2%. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 5 SID01N60 Elektronische Bauelemente 1.6A, 600V,RDS(ON)8[ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Temperature Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Maximum Drain Current v.s. Case Temperature http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Fig 6. Type Power Dissipation Any changing of specification will not be informed individual Page 3 of 5 SID01N60 Elektronische Bauelemente 1.6A, 600V,RDS(ON)8[ N-Channel Enhancement Mode Power Mos.FET Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Fig 12. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual Page 4 of 5 SID01N60 Elektronische Bauelemente 1.6A, 600V,RDS(ON)8[ N-Channel Enhancement Mode Power Mos.FET Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 5 of 5 |
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